Our researchers were delighted to receive the “SiliconPV Award” at this year's SiliconPV conference in Oxford.
This award recognizes the 10 best abstracts of scientific articles, out of 149 submitted, after a “blind review”, with authors and affiliations unknown to the evaluators.
The work presented concerns the [Spatial distribution of dopants and oxygen-related defects in antimony-doped Czochralski ingots]. This work, carried out in collaboration with LONGi, aims to study the composition and electronic properties of this promising new material for the photovoltaic industry, with antimony doping enabling optimal resistivity control, among other benefits.